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To produce N - type crystal Ge or Si may...

To produce N - type crystal Ge or Si may be doped with a substance that is :

A

divalent

B

trivalent

C

tetravalent

D

pentavalent.

Text Solution

Verified by Experts

The correct Answer is:
D
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MODERN PUBLICATION-SOLIDS & SEMICONDUCTOR DEVICES-Revision Test
  1. To produce N - type crystal Ge or Si may be doped with a substance tha...

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  2. Choose the forward biased p-n junction :

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  3. Choose the reverse biased p-n junction :

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  4. The forward biased characteristics of a p - n junction are :

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  5. If Ie is emitter current , Ib is base current and Ic is the collector ...

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  6. Zener diode is :

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  7. The reverse biased characteristics of a p-n junction are :

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  8. The advantage of BJT (Bipolar junction transistor) over vacuum tube tr...

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  9. For an unknown element , the thickness of forbidden band is 4.97 eV an...

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  10. At abosolute zero, a metal will behave as :

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  11. A piece aluminium and germanium each, are cooled from T1 K to T2 K . T...

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  12. One speaks of mutual characteristics in connection with L :

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  13. In a frequency modulated wave :

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  14. A small portion of Indium is incorporated is germanium . The crystal w...

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  15. In a transistor the base is made very thin and a very hightly doped ...

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  16. The safety limit of temperature for germanium and silicon are :

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  17. A semiconductor diode designed to operate in breakdown region is calle...

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  18. Power consumed by an ideal diode is :

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  19. A conductor at very high temperature becomes :

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  20. Zenor breakdown semiconductor

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  21. Conduction - electron have more mobility than holes because these elec...

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