Home
Class 12
PHYSICS
For common emitter circuit of a transist...

For common emitter circuit of a transistor , when the base current changes by `80 muA`, the collector current change by 4.8 mA. Then the current amplification factor will be :

A

120

B

30

C

60

D

none of these

Text Solution

Verified by Experts

The correct Answer is:
C
`beta = ((DeltaI_c)/(DeltaI_b))=(4.8xx10^(-3))/(80xx10^(-6))=60`
Promotional Banner

Topper's Solved these Questions

  • SOLIDS & SEMICONDUCTOR DEVICES

    MODERN PUBLICATION|Exercise Multiple Choice Questions - LEVEL -I (ASSERTION)|5 Videos

  • SOLIDS & SEMICONDUCTOR DEVICES

    MODERN PUBLICATION|Exercise Multiple Choice Questions - LEVEL -I (PARAGRAPH)|6 Videos

  • ROTATIONAL MOTION

    MODERN PUBLICATION|Exercise RCQ|8 Videos

  • TRANSFERENCE OF HEAT

    MODERN PUBLICATION|Exercise Recent Competitive Questions|4 Videos

Similar Questions

Explore conceptually related problems

In an n-p-n transistor, the base current is 100 muA and the collector current is 10 mA, the emitter current is

For a common emitter configuration, the base current is 60 muA and the collector current is 6 mA, the current gain is

The current gain of a transistor is 100. If the base current changes by 200 muA , what is the change in collected current ?

Define ac signal current amplification factor (beta) .

In an n-p-n transistor, the emitter current is

In a transistor , the collector current varies by 0.49mA and emitter current varies by 0.50mA current gain beta measured is

MODERN PUBLICATION-SOLIDS & SEMICONDUCTOR DEVICES-Revision Test
  1. For common emitter circuit of a transistor , when the base current cha...

    Text Solution

    |

  2. Choose the forward biased p-n junction :

    Text Solution

    |

  3. Choose the reverse biased p-n junction :

    Text Solution

    |

  4. The forward biased characteristics of a p - n junction are :

    Text Solution

    |

  5. If Ie is emitter current , Ib is base current and Ic is the collector ...

    Text Solution

    |

  6. Zener diode is :

    Text Solution

    |

  7. The reverse biased characteristics of a p-n junction are :

    Text Solution

    |

  8. The advantage of BJT (Bipolar junction transistor) over vacuum tube tr...

    Text Solution

    |

  9. For an unknown element , the thickness of forbidden band is 4.97 eV an...

    Text Solution

    |

  10. At abosolute zero, a metal will behave as :

    Text Solution

    |

  11. A piece aluminium and germanium each, are cooled from T1 K to T2 K . T...

    Text Solution

    |

  12. One speaks of mutual characteristics in connection with L :

    Text Solution

    |

  13. In a frequency modulated wave :

    Text Solution

    |

  14. A small portion of Indium is incorporated is germanium . The crystal w...

    Text Solution

    |

  15. In a transistor the base is made very thin and a very hightly doped ...

    Text Solution

    |

  16. The safety limit of temperature for germanium and silicon are :

    Text Solution

    |

  17. A semiconductor diode designed to operate in breakdown region is calle...

    Text Solution

    |

  18. Power consumed by an ideal diode is :

    Text Solution

    |

  19. A conductor at very high temperature becomes :

    Text Solution

    |

  20. Zenor breakdown semiconductor

    Text Solution

    |

  21. Conduction - electron have more mobility than holes because these elec...

    Text Solution

    |