Home
Class 12
PHYSICS
A potential barrier of 0.2 V exists acro...

A potential barrier of 0.2 V exists across an unbiased p-n junction
(i) Calculate the width of the depletion region if an electric field of `10^(6) Vm^(-1)` exists in it
(ii) With what minimum kinetic energy a hole should diffuse from the p side to the n side if the junction is
(a) unbiased
(b) forward biased at 0.1 V
(c ) reverse biased at 0.1 V

Text Solution

Verified by Experts

(i) Given potential barrier `V= 0.2 V`
Let d be the width of the potential barrier .Then Electric field
`E= (V)/(D)`
`rArr d= (V)/( E) = (0.2)/( 10^(6)) = 0.2 mu m`
(ii) When the p-n junction is revers biased at `0.1 V,` the reverse bias aids the potential barrier and increase it to `(0.2 + 0.1 V) = 0.3 V`
Minimum kinetic energy `E_(R) =eV`
`= 1.6 xx 10^(-19) xx 0.3 V`
`=0.3 eV`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise NCERT FILE SOLVED (TEXT BOOK EXERCISES )|30 Videos
  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise HIGER ORDER THINKING SKILLS & ADVANCED LEVEL|11 Videos
  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise CONCEPUAL QUESTIONS|37 Videos
  • RAY OPTICS AND OPTICAL INSTRUMENTS

    MODERN PUBLICATION|Exercise CHAPTER PRACTICE TEST|14 Videos
  • WAVE OPTICAL

    MODERN PUBLICATION|Exercise CHAPTER PRACTICE TEST|7 Videos

Similar Questions

Explore conceptually related problems

The potential barrier exists across the junction is 0.2volt.What minimm kinetic energy a hole should have to diffuse from the p-side to the n-side if (a)the junction is unbiased,(b)the junction is forward-biased at 0.1volt and ©the junction is reverse-biased at 0.1volt?

In a p-n junction the depletion region is 400 nm wide and electric field of 5 xx 10^(5) Vm^(-1) exists in it. The minimum energy of a conduction electron, which can diffuse from n-side to the p-side is.

p-n junction is called as forward biased when

A potential barrier of 0.5V exists across a p-n junction . If the widht of depletion layer is 10^(-6) m, then intensity of electric field in this region will be

A potential barrier of 0.3 V exists across a p-n junction. If the depletion region is 1 mu m wide, what is the intensity of electric field in this region?

A potential barrier of 0.50V exists a p-n junction. If the width of depletion layer is 10^(6)m , then intensity of electric field in this region will be

If P-N junction is reverse biased then width of depletion layer :-

On adjusting the P-N junction diode in forward biased