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In an intrinsic semiconductor the energy...

In an intrinsic semiconductor the energy gap `E_(g)` is 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600 K and that at 300 K? Assume that the temerature dependence of intrinsic carrier concentration `n_(i)` is given by
`n_(i)=n_(0)"exp"(-(E_(g))/(2k_(B)T))` where `n_(0)`is a constant.

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Here `(DeltaE)/(2K)[1/(T_(1))-1/(T_(2))]`
`=1.2/(2xx8.62xx10^(-5))[1/300-1/600]=11.6`
`(n_(600))/(n_(300))=e^((DeltaE)/(2K)[1/(T_(1))-1/(T_(2))])=e^(11.6)=(2.718)^(11.6)`
Solving using logs `(n_(600))/(n_(300))=1.089xx10^(5)`
`=1.1xx10^(5)`
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